Terahertz Devices and Systems
The Terahertz Devices and Systems was founded in the framework of the LOEWE priority program “Sensors Towards Terahertz” in order to develop Terahertz technology for key applications. The group works on photomixing Terahertz sources, field effect transistor-based rectifying Terahertz detectors, combination of both in Terahertz systems as well as their applications in Terahertz science. The group works on photomixing Terahertz sources, field effect transistor-based rectifying Terahertz detectors, combination of both in Terahertz systems as well as their applications in Terahertz science.
ERC starting grant “Pho-T-Lyze”
ERC Starting grant, grant agreement No. 713780
The ERC starting grant “Pho-T-Lyze” aims for developing photonic Terahertz signal analyzers with extremely large THz bandwidths. In particular, spectrum analyzers and vector network analyzers shall be developed with on-chip measurement capability.
The Terahertz Devices and Systems Laboratory is now member of the SFB MARIE that targets for the development of a mobile material transceiver based on Terahertz technology. In collaboration with the University of Duisburg-Essen and the Ruhr University Bochum we develop arrayed photonic transceivers and high dynamic range photonic Terahertz systems.
Further information about MARIE and its projects and PIs can be foun here: https://trrmarie.de/sfbtrr196marie/
REPHCON aims for the development of Rare Earth-enhanced Photoconductors for Terahertz generation and detection at telecom wavelengths. The project is supported by the Deutsche Forschungsgemeinschaft (REHCON).
Horizon 2020: ITN/ETN NetLaS: Next Generation of Tunable Lasers for Optical Coherence Tomography
NetLaS aims for developing advanced technologies for optical coherence tomography. In this framework, 15 PhD students will be trained in topics concerning laser technology, optical coherence tomography and imaging.
The consortium consists of five Universities and three companies supported by further industrial partners.
We develop field effect transistor-based rectifiers for Terahertz detection. While amplifying transistors are limited by ft and fmax,, rectifiers work excellently far above these frequencies. The project focuses on III-V high electron mobility transistors with very shallow channels (~15-30 nm) and simultaneous optical and THz detection. The project is funded by the deutsche Forschungsgemeinschaft (LA-FET).
Horizon 2020: ITN/ETN CELTA: Convergence of Electronics and Photonics Technologies for Enabling Terahertz Applications
Speaker kommittee member of the “Profilbereich vom Material zur Produktinnovation”
Web page: http://www.pmp.tu-darmstadt.de/
2nd chairperson: Prof. Dr. Sascha Preu
Web page: https://terahertzcenter.de