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TeraFETs

Field effect transistor-based THz detectors

Packaged field effect transistor for ultrafast detection on hight power THz radiation (Photo: S. Preu)
Packaged field effect transistor for ultrafast detection on hight power THz radiation (Photo: S. Preu)

We develop field effect transistor-based rectifiers for Terahertz detection. While amplifying transistors are limited by ft and fmax, rectifiers work excellently far above these frequencies. The project focuses on III-V high electron mobility transistors with very shallow channels (~15-30 nm) and simultaneous optical and THz detection. The project was funded by the deutsche Forschungsgemeinschaft (LA-FET, PR1413/2-1).

Team

Project responsible: Sascha Preu
Team members:
Rahul Yadav (PhD student) develops field effect transistor-based rectifiers and Schottky diodes for accelerator-based high power facilities. The direct detectors are tailored to both beam diagnosis as well as detection of pulses, e.g. at FELBE.
Former member: Dr. Stefan Regensburger has worked extensively on field effect transistor-based rectifiers and performed investigations both in lab-scale experiments as well as at the accelerator facility FELBE (Helmholtz-Center Dresden-Rossendorf)
Further Bachelor and Master students support the project (past and ongoing):
Amlan Mukherjee (Master student, antenna-coupled FETs)

Publications