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LA-FET

Packaged field effect transistor for ultrafast detection on hight power THz radiation (Photo: S. Preu)
Packaged field effect transistor for ultrafast detection on hight power THz radiation (Photo: S. Preu)

We develop field effect transistor-based rectifiers for Terahertz detection. While amplifying transistors are limited by ft and fmax,, rectifiers work excellently far above these frequencies. The project focuses on III-V high electron mobility transistors with very shallow channels (~15-30 nm) and simultaneous optical and THz detection. The project is funded by the deutsche Forschungsgemeinschaft (LA-FET).